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| SemiWell Semiconductor SBN13001 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 120ns@100mA) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 120mV@100mA/20mA) - Wide Reverse Bias S.O.A Symbol 2.Collector 1.Base 3.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-92 1 23 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP 5 ms ) Base Current Base Peak Current ( tP 5 ms ) Total Dissipation at TA = 25 C Storage Temperature Max. Operating Junction Temperature Value 700 400 8.0 0.2 0.4 0.1 0.2 750 - 65 ~ 150 150 Units V V V A A A A mW C C Thermal Characteristics Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient Value 166 Units C/W Oct, 2002. Rev. 1 Copyright@S emiWell S emiconduct or Co., Ltd., All rights reserved 1/4 SBN13001 Electrical Characteristics Symbol ICEV VCEO(sus) VCE(sat) VBE(sat) hFE ( TC = 25 C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Resistive Load Turn-On Time Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Condition VCE = 650V VCE = 650V IC = 1 mA IC = 50mA IC = 100mA IC = 50mA IC = 50mA IC = 100mA IC = 100mA IB1 = 20mA TP = 25 VCC = 15V IB1 = 20mA L = 0.35mH VCC = 15V IB1 = 20mA L = 0.35mH IC = 100mA IB2 = -50mA Vclamp = 300V IC = 100mA IB2 = -50mA Vclamp = 300V TC = 100 C IB = 10mA IB = 20mA IB = 10mA VCE = 10V VCE = 10V VCC = 125V IB2 = -20mA TC = 100 C Min - Typ - Max 1.0 5.0 - Units mA 400 - V - - 0.3 0.4 1 V V - 10 10 - 30 ton ts tf ts tf - 0.2 1.5 0.15 1.0 3.0 0.4 - 2.0 0.12 4.0 0.3 ts tf - 2.4 0.15 5.0 0.4 Notes : Pulse Test : Pulse width 300, Duty cycle 2% 2/4 SBN13001 Fig 1. Static Characteristics 0.5 Fig 2. DC Current Gain 25 0.4 IB=70mA IB=50mA IC,Collector Current[A] 0.3 IB=40mA IB=30mA hFE, DC Current Gain IB=60mA TJ = 125 C 20 o o TJ = 25 C 15 0.2 IB=20mA IB=10mA 0.1 10 0.0 IB=0mA 0 1 2 3 4 5 Notes : VCE = 5V 0.01 0.1 1E-3 VCE,Collector-Emitter Voltage[V] IC, Collector Current [A] Fig 3. Collector-Emitter Saturation Voltage 1 1.0 Fig 4. Base-Emitter Saturation Voltage VCE,Collector-Emitter Voltage[V] VBE,Base-Emitter Voltage[V] 0.9 TJ=125 C 0.1 o 0.8 TJ=25 C o TJ=25 C o 0.7 TJ=125 C 0.6 o Notes : hFE = 5 0.01 0.01 0.1 Notes : hFE = 5 0.1 0.5 0.01 IC,Collector Current[A] IC,Collector Current[A] Fig 5. Safe Operation Areas 10 0 Fig 6. Power Derating Curve 125 100 10 -1 Power Derating Factor(%) IC,Collector Current[A] 75 DC 10 -2 50 25 10 -3 10 0 10 1 10 2 10 3 0 0 50 100 150 o 200 VCE,Collector-Emitter Clamp Voltage[V] TC,Case Temperature( C) 3/4 SBN13001 Inductive Load Switching & RBSOA Test Circuit LC IB1 IC IB VCE D.U.T RBB VBE(off) VClamp VCC Resistive Load Switching Test Circuit RC IB1 IC IB VCE D.U.T RBB VBE(off) VCC 4/4 |
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